Plasma processing apparatus and plasma processing method

ABSTRACT

Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 14/565,612, filed on Dec. 10, 2014, which claims priority to Japanese Patent Application No. 2013-257008, filed on Dec. 12, 2013, the disclosures of which are incorporated herein in their entirety by reference, and priority is claimed to each of the foregoing.

TECHNICAL FIELD

The present disclosure relates to a plasma processing apparatus and a plasma processing method which use a frequency-variable power supply.

BACKGROUND

In a capacitively-coupled plasma processing apparatus, for example, a parallel plate type plasma processing apparatus, plasma is generated between an upper electrode and a lower electrode within a processing chamber. However, the distribution of the generated plasma becomes non-uniform according to, electrical properties of a semiconductor wafer (hereinafter, simply referred to as a “wafer”) disposed between the plasma and the lower electrode and components disposed within the processing chamber, or processing conditions such as the kind of a processing gas introduced into the processing chamber, and the pressure and temperature within the processing chamber. Especially, the plasma density increases in the vicinity of the center of the upper electrode.

The plasma density depends on the electric field within the processing chamber. Thus, the assignee suggested, in Japanese Laid-Open Patent Publication No. 2004-193565, a technology of dividing the upper electrode facing the space within the processing chamber into an inner electrode and an annular outer electrode surrounding the inner electrode, and setting the value of a high frequency power to be applied to the outer electrode to be larger than the value of a high frequency power to be applied to the inner electrode so as to partially control an electric field within the processing chamber. Also, in order to achieve the same object, U.S. Pat. No. 8,012,306 discloses a technology of dividing the lower electrode into an inner electrode and an annular outer electrode surrounding the inner electrode, and setting high frequency powers to be applied to the inner electrode and the outer electrode to have different values.

SUMMARY

The present disclosure provides a plasma processing apparatus comprising: a processing chamber configured to accommodate a substrate therein to perform a processing on the substrate by plasma; an electrode configured to generate the plasma within the processing chamber; and a frequency-variable power supply connected to the electrode and configured to change a frequency of a high frequency power to be supplied to the electrode. A plurality of routes of the high frequency current, which starts from the frequency-variable power supply and passes through the plasma, is present, and the plurality of routes of the high frequency current includes at least a first route and a second route, a reflection minimum frequency of the first route is different from a reflection minimum frequency of the second route, and a frequency range to be changed by the frequency-variable power supply includes the reflection minimum frequency of the first route and the reflection minimum frequency of the second route.

The foregoing summary is illustrative only and is not intended to be in any way limiting. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a first exemplary embodiment of the present disclosure.

FIG. 2 is a cross-sectional view schematically illustrating a configuration of a first modified example of the plasma processing apparatus of FIG. 1.

FIG. 3 is a cross-sectional view schematically illustrating a configuration of a second modified example of the plasma processing apparatus of FIG. 1.

FIG. 4 illustrates graphs for explaining a plasma processing method according to the present exemplary embodiment.

FIG. 5 illustrates graphs for explaining a first modified example of the plasma processing method of FIG. 4.

FIG. 6 illustrates graphs for explaining a second modified example of the plasma processing method of FIG. 4.

FIG. 7 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a second exemplary embodiment of the present disclosure.

FIG. 8 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a third exemplary embodiment of the present disclosure.

FIG. 9 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a fourth exemplary embodiment of the present disclosure.

FIG. 10 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a fifth exemplary embodiment of the present disclosure.

FIG. 11 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a sixth exemplary embodiment of the present disclosure.

FIGS. 12A and 12B are bottom views illustrating modified examples of a division form of an upper electrode, in which FIG. 12A illustrates a case where the upper electrode is divided into three electrodes, and FIG. 12B illustrates a case where the upper electrode is divided into a plurality of electrodes of regular hexagonal pieces.

FIG. 13 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to a seventh exemplary embodiment of the present disclosure.

FIG. 14 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to an eighth exemplary embodiment of the present disclosure.

DETAILED DESCRIPTION

In the following detailed description, reference is made to the accompanying drawing, which form a part hereof. The illustrative embodiments described in the detailed description, drawing, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made without departing from the spirit or scope of the subject matter presented here.

When a high frequency power to be applied to the inner electrode, and a high frequency power to be applied to the outer electrode are set to have different values, a single high frequency power supply may apply the high frequency powers to respective electrodes. In such a case, however, a ratio of the value of the high frequency power to be applied to each electrode is determined according to the capacity of an electrical circuit from the high frequency power supply to the electrode. Thus, it is difficult to largely change only the value of the high frequency power to be applied to, for example, the outer electrode. That is, it is difficult to separately control the high frequency power to be applied to the inner electrode and the high frequency power to be applied to the outer electrode by using the single high frequency power supply. Thus, it is difficult to control plasma distribution within the processing chamber.

Meanwhile, when a high frequency power supply connected to the inner electrode and a high frequency power supply connected to the outer electrode are disposed, the high frequency power to be applied to the inner electrode and the high frequency power to be applied to the outer electrode may be separately controlled so as to control the plasma distribution within the processing chamber. However, in this case, there is a problem in that the apparatus configuration may be complicated.

An object of the present disclosure is to provide a plasma processing apparatus and a plasma processing method, which are capable of improving a degree of freedom of control of plasma distribution within a processing chamber so as to uniformly perform a plasma processing, without complicating the configuration.

In order to achieve the object, there is provided a plasma processing apparatus. The plasma processing apparatus includes: a processing chamber configured to accommodate a substrate therein to perform a processing on the substrate by plasma; an electrode configured to generate the plasma within the processing chamber; and a frequency-variable power supply connected to the electrode and configured to change a frequency of a high frequency power to be supplied to the electrode. A plurality of routes of the high frequency current, which starts from the frequency-variable power supply and passes through the plasma, is present, and the plurality of routes of the high frequency current includes at least a first route and a second route, a reflection minimum frequency of the first route is different from a reflection minimum frequency of the second route, and a frequency range to be changed by the frequency-variable power supply includes the reflection minimum frequency of the first route and the reflection minimum frequency of the second route.

In the plasma processing apparatus, a difference between the reflection minimum frequency of the first route and the reflection minimum frequency of the second route is less than 2 MHz.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon and to serve as the electrode, and a focus ring disposed to surround the mounted substrate. The frequency-variable power supply is connected to the mounting stage, the first route passes through the mounting stage, the mounted substrate and the plasma, and the second route passes through the mounting stage, the focus ring and the plasma.

The plasma processing apparatus further includes a counter electrode which faces the mounting stage through the plasma. The counter electrode includes an inner electrode which faces the substrate, and an outer electrode disposed to face the focus ring and to surround the inner electrode, the first route also passes through the inner electrode, and the second route also passes through the outer electrode.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon and to serve as the electrode. The processing chamber includes a side wall electrode which faces the plasma in a side wall of the processing chamber, the frequency-variable power supply is connected to the mounting stage and the side wall electrode, the first route passes through the mounting stage, the mounted substrate and the plasma, and the second route passes through the side wall electrode and the plasma.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon and to serve as the electrode, and a capacity-variable switching box disposed outside the processing chamber to change a capacity. The frequency-variable power supply is connected to the mounting stage, the first route passes through the mounting stage, the mounted substrate, the plasma and the capacity-variable switching box, and the capacity of the capacity-variable switching box is changed according to a change of a capacity of the plasma after the plasma is ignited.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon and to serve as the electrode, a counter electrode which faces the mounting stage through the plasma, and a circulator disposed between the counter electrode and a ground. The frequency-variable power supply is connected to the mounting stage, the first route passes through the mounting stage, the mounted substrate and the plasma, and the second route passes through the circulator, the counter electrode and the plasma.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon, and a counter electrode which faces the mounting stage through the plasma and serves as the electrode. The counter electrode is divided into at least a first electrode and a second electrode, the frequency-variable power supply is connected to the first electrode and the second electrode, the first route passes through the first electrode and the plasma, and the second route passes through the second electrode and the plasma.

In the plasma processing apparatus, a capacitor is interposed between the frequency-variable power supply and a junction of the first route and the second route.

In the plasma processing apparatus, in the first route, the frequency-variable power supply is capacitively coupled with the first electrode, and in the second route, the frequency-variable power supply is capacitively coupled with the second electrode.

In the plasma processing apparatus, the first electrode is an inner electrode, and the second electrode is an outer electrode disposed to surround the inner electrode.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon, and a counter electrode which faces the mounting stage through the plasma and serves as the electrode. The processing chamber includes a side wall electrode which faces the plasma in a side wall of the processing chamber, the frequency-variable power supply is connected to the counter electrode and the side wall electrode, the first route passes through the counter electrode and the plasma, and the second route passes through the side wall electrode and the plasma.

The plasma processing apparatus further includes a mounting stage disposed within the processing chamber and configured to mount the substrate thereon, a counter electrode which faces the mounting stage through the plasma and serves as the electrode, and a capacity-variable switching box disposed outside the processing chamber to change a capacity. The frequency-variable power supply is connected to the counter electrode, the first route passes through the counter electrode, the plasma, the mounted substrate, the mounting stage and the capacity-variable switching box, and the capacity of the capacity-variable switching box is changed according to a change of an impedance of the first route after the plasma is ignited.

In the plasma processing apparatus, at least one of the first route and the second route includes an impedance adjusting circuit.

The plasma processing apparatus is a parallel plate capacitive-coupled plasma processing apparatus.

In order to achieve the object, there is provided a method of performing a processing by plasma in a plasma processing apparatus. The plasma processing apparatus includes a processing chamber configured to accommodate a substrate therein to perform the processing on the substrate by the plasma, an electrode configured to generate the plasma within the processing chamber, and a frequency-variable power supply connected to the electrode and configured to change a frequency of a high frequency power to be supplied to the electrode. A plurality of routes of the high frequency current, which starts from the frequency-variable power supply and passes through the plasma, is present, the plurality of routes of the high frequency current includes at least a first route and a second route, and a reflection minimum frequency of the first route is different from a reflection minimum frequency of the second route. The frequency-variable power supply changes a frequency of the high frequency current to be generated so that the frequency includes the reflection minimum frequency of the first route and the reflection minimum frequency of the second route.

In the method, a difference between the reflection minimum frequency of the first route and the reflection minimum frequency of the second route is less than 2 MHz.

In the method, the frequency-variable power supply alternately repeats generation of the high frequency current having the reflection minimum frequency of the first route, and generation of the high frequency current having the reflection minimum frequency of the second route.

In the method, a ratio of a period where the high frequency current having the reflection minimum frequency of the first route is generated and a period where the high frequency current having the reflection minimum frequency of the second route is determined based on a ratio of a reflectivity of the high frequency current at the reflection minimum frequency of the first route, and a reflectivity of the high frequency current at the reflection minimum frequency of the second route.

In the method, the frequency-variable power supply supplies the high frequency power having a frequency between the reflection minimum frequency of the first route and the reflection minimum frequency of the second route.

According to the present disclosure, the plurality of routes of the high frequency current (that is, the first route and the second route), which starts from the frequency-variable power supply and passes through the plasma, has different reflection minimum frequencies, and the frequency range to be changed by the frequency-variable power supply includes the reflection minimum frequency of the first route and the reflection minimum frequency of the second route. Thus, the frequency-variable power supply may generate a high frequency current having the reflection minimum frequency of the first route or the reflection minimum frequency of the second route, that is, a high frequency current having a frequency at which the reflectivity of the first route is low or a frequency at which the reflectivity of the second route is low. Thus, the amount of the high frequency current flowing through the first route or the second route may be adjusted. Here, the amount of the plasma generated in the vicinity of the first route or the second route is dependent on the amount of the high frequency current flowing through the first route or the second route. Thus, the generated amount of the plasma may be locally controlled by adjusting the amount of the high frequency current flowing through the first route or the second route. As a result, the degree of freedom of control of plasma distribution within the processing chamber may be improved without complicating the configuration of the plasma processing apparatus, so that the plasma processing may be uniformly performed.

Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings.

First, a plasma processing apparatus according to a first exemplary embodiment of the present disclosure will be described.

FIG. 1 is a cross-sectional view schematically illustrating a configuration of the plasma processing apparatus according to the present exemplary embodiment.

In FIG. 1, a plasma processing apparatus 10 is a parallel plate type capacitively coupled plasma processing apparatus, which includes a substantially cylindrical chamber 11 (a processing chamber) inside of which is pressure-reducible, a pedestal-like susceptor 12 (a mounting stage) disposed on the bottom within the chamber 11 and configured to mount a wafer W thereon and to serve as a lower electrode, an annular focus ring 13 disposed to surround the wafer W mounted on the susceptor 12, an upper electrode 14 disposed on a ceiling portion of the chamber 11 to face the susceptor 12 and grounded, and a variable frequency power supply (hereinafter, referred to as “VF power supply”) 16 connected to the susceptor 12 via an LC circuit 15 (an impedance adjustment circuit).

In the plasma processing apparatus 10, a processing gas is introduced into the decompressed chamber 11 and a high frequency power is supplied to the susceptor 12 from the VF power supply 16 so that an electric field generated by the supplied high frequency power excites the processing gas to generate plasma within the chamber 11. By the plasma, a desired plasma processing, for example, a dry etching processing or a film forming processing, is performed on the wafer W.

In the plasma processing apparatus 10, a high frequency current flows between the susceptor 12 connected to the VF power supply 16 and the upper electrode 14 having a ground potential, but plasma is generated in the route of the high frequency current. Thus, within the plasma processing apparatus 10, plasma P is generated between the susceptor 12 connected to the VF power supply 16 and the upper electrode 14, more specifically, between the susceptor 12 and the upper electrode 14. That is, the upper electrode 14 and the susceptor 12 face each other through the plasma P, in which a sheath S₁ is interposed between the susceptor 12 and the plasma P, and a sheath S₂ is interposed between the plasma P and the upper electrode 14.

When the VF power supply 16 applies a high frequency power to the susceptor 12, the high frequency power is supplied into the chamber 11, thereby generating an electric field. The VF power supply 16 may electronically change the frequency of the high frequency power to be supplied in a predetermined range, for example, in a range of ±1 MHz.

However, in the plasma processing apparatus 10, a first route L₁ and a second route L₂ exist as routes of a high frequency current which pass through the plasma P to reach the upper electrode 14, starting from the VF power supply 16.

In the present exemplary embodiment, the susceptor 12 is made of a conductive material, for example, aluminum including an insulating film such as, for example, a sprayed film of yttrium oxide (Y₂O₃), formed on a surface thereof. In this case, the first route L₁ is formed via a region including the wafer W and the upper electrode 14. Specifically, the first route L₁ is formed to pass through the LC circuit 15, the susceptor 12, the wafer W, the sheath S₁, the plasma P, the sheath S₂, and the upper electrode 14, starting from the VF power supply 16. The second route L₂ is formed via a region including the focus ring 13 and the upper electrode 14. Specifically, the second route L₂ is formed to pass through the LC circuit 15, the susceptor 12, the focus ring 13, the sheath S₁, the plasma P, the sheath S₂, and the upper electrode 14, starting from the VF power supply 16.

In the first route L₁, for example, a path capacity C_(e) between the susceptor 12 and the wafer W, a path capacity C_(s1) of the sheath S₁, and a path capacity C_(s2) of the sheath S₂ exist, and in the second route L₂, for example, a path capacity C_(f) of the focus ring 13, a path capacity C_(s1) of the sheath S₁, and a path capacity C_(s2) of the sheath S₂ exist. Thus, the first route L₁ and the second route L₂ have different specific path capacities, respectively. When the routes of the high frequency current have different path capacities, the routes have different resonant frequencies. Thus, the first route L₁ and the second route L₂ have different specific resonant frequencies.

In general, close to a resonant frequency of a route of a high frequency current, specifically, between a parallel resonant frequency and a serial resonant frequency, a reflection minimum frequency, where the reflectivity of the high frequency current becomes the lowest in the route, exists. When a high frequency current having the reflection minimum frequency flows through the route, a large amount of high frequency current may efficiently flows. That is, in the present exemplary embodiment, the VF power supply 16 may generate a high frequency current having a reflection minimum frequency F₁ of the first route L₁ (hereinafter, simply referred to as “reflection minimum frequency F₁”) in order to cause a large amount of high frequency current to flow through the first route L₁, and the VF power supply 16 may generate a high frequency current having a reflection minimum frequency F₂ of the second route L₂ (hereinafter, simply referred to as “reflection minimum frequency F₂”) in order to cause a large amount of high frequency current to flow through the second route L₂. Also, the amount of plasma generated in the vicinity of the route of the high frequency current depends on the amount of the high frequency current flowing through the route.

Accordingly, the present exemplary embodiment adjusts the amount of the high frequency current flowing through the first route L₁ or the second route L₂ by changing the frequency of the high frequency current generated from the VF power supply 16 so as to control the amount of the plasma generated in the vicinity of the first route L₁ or the second route L₂. For example, the VF power supply 16 may generate a high frequency current having a frequency close to the reflection minimum frequency F₁ so that a large amount of high frequency current may flow through the first route L₁ to increase the amount of plasma generated in the vicinity of the first route L₁, and may generate a high frequency current having a frequency close to the reflection minimum frequency F₂ so that a large amount of high frequency current may flow through the second route L₂ to increase the amount of plasma generated in the vicinity of the second route L₂.

Accordingly, in the plasma processing apparatus 10, the generated amount of the plasma may be locally controlled within the chamber 11. Here, there is no need to dispose a specific high frequency power supply for each of the first route L₁ and the second route L₂, and the amount of a high frequency current flowing through the first route L₁ or the second route L₂ may be adjusted by only one VF power supply 16. This improves the degree of freedom of control of plasma distribution within the chamber 11 to uniformly perform a plasma processing at a low cost, without complicating the configuration of the plasma processing apparatus 10.

The VF power supply 16 electronically changes a frequency of a high frequency current, and thus quickly changes the frequency. As a result, the control of distribution of plasma within the chamber 11 may be quickly performed. The VF power supply 16 does not change a frequency of a high frequency current which is generated by mechanically switching circuits therein. Thus, the VF power supply 16 is hardly failed and as a result, the reliability of the plasma processing apparatus 10 may be improved.

In the plasma processing apparatus 10 described above, it is preferable that the reflection minimum frequency F₁ and the reflection minimum frequency F₂ fall in a frequency range of a high frequency current which is changeable by the VF power supply 16. Specifically, it is preferable that a difference between the reflection minimum frequency F₁ and the reflection minimum frequency F₂ is less than 2 MHz. In this case, the VF power supply 16 may generate both a high frequency current having the reflection minimum frequency F₁ and a high frequency current having the reflection minimum frequency F₂, and thus allow a large amount of high frequency current to flow through any of the first route L₁ and the second route L₂. As a result an adjustment width of the amount of plasma generated in the vicinity of the first route L₁ and in the second route L₂ may be increased.

In order to adjust the reflection minimum frequency F₁ or the reflection minimum frequency F₂, the path capacity of the first route L₁ or the second route L₂ may be changed, or as illustrated in FIG. 2, for example, an LC circuit 15 a may be added to the second route L₂. In this case, the susceptor 12 may be made of a dielectric material, for example, ceramic, so that a high frequency current flowing through the LC circuit 15 a does not join to the first route L₁ in the susceptor 12. In addition, conductive plates 17 a and 17 b may be embedded at a location corresponding to the wafer W and at a location corresponding to the focus ring 13, respectively, such that the LC circuit 15 may be connected to the conductive plate 17 a, and the LC circuit 15 a may be connected to the conductive plate 17 b.

For example, as illustrated in FIG. 3, the upper electrode 14 may be divided into an inner electrode 18 facing the wafer W, and an outer electrode 19 disposed to face the focus ring 13 and surround the inner electrode 18. The inner electrode 18 and the outer electrode 19 may be insulated from each other, the inner electrode 18 may be grounded via an LC circuit 15 b, and the outer electrode 19 may be grounded via an LC circuit 15 c. The susceptor 12 may be made of a dielectric material and a conductive plate 17 may be embedded in the susceptor 12 so that the LC circuit 15 may be connected to the conductive plate 17. In this case, the first route L₁ passes through the LC circuit 15, the conductive plate 17, the susceptor 12, the wafer W, the sheath S₁, the plasma P, the sheath S₂, the inner electrode 18, and the LC circuit 15 b, starting from the VF power supply 16, and the second route L₂ passes through the LC circuit 15, the conductive plate 17, the susceptor 12, the focus ring 13, the sheath S₁, the plasma P, the sheath S₂, the outer electrode 19, and the LC circuit 15 c, starting from the VF power supply 16. Here, for example, when the impedance of the LC circuit 15 c may be set to be different from the impedance of the LC circuit 15 b, the reflection minimum frequency F₁ or the reflection minimum frequency F₂ may be adjusted by simply changing a path capacity of the first route L₁ or the second route L₂.

A method of adjusting the reflection minimum frequency F₁ or the reflection minimum frequency F₂ is not limited to the method illustrated in FIG. 2 or 3. For example, the LC circuit 15 may be removed from the first route L₁, or may be added to the first route L₁ or the second route L₂. Also, the methods of FIGS. 2 and 3 may be combined with each other.

Hereinafter, a plasma processing method according to the present exemplary embodiment will be described.

FIG. 4 illustrates graphs for explaining a plasma processing method according to the present exemplary embodiment.

In FIG. 4, as illustrated in the upper graph, at the reflection minimum frequency F₁, the reflectivity of the first route L₁ becomes minimum, and at the reflection minimum frequency F₂, the reflectivity of the second route L₂ becomes minimum. However, in the present exemplary embodiment, as illustrated in a lower graph, the frequency of a high frequency current generated from the VF power supply 16 is alternately repeatedly changed between the reflection minimum frequency F₁ and the reflection minimum frequency F₂ in a pulse manner.

In FIG. 4, a reflectivity R₁ at the reflection minimum frequency F₁ and a reflectivity R₂ at the reflection minimum frequency F₂ are the same. Thus, when a period T₁ where a high frequency current having the reflection minimum frequency F₁ is generated (hereinafter, simply referred to as a “period T₁”) and a period T₂ where a high frequency current having the reflection minimum frequency F₂ is generated (hereinafter, simply referred to as a “period T₂”) are set to be the same, an accumulative amount of the plasma generated in the vicinity of the first route L₁, and an accumulative amount of the plasma generated in the vicinity of the second route L₂ may be the same. Thus, the amount of the plasma generated just above the wafer W and the amount of the plasma generated just above the focus ring 13 may be the same. As a result, the plasma P uniformly distributed within the chamber 11 may be obtained.

It may be desired to give a difference between the amount of the plasma generated just above the wafer W and the amount of the plasma generated just above the focus ring 13. In such a case, for example, when the period T₁ is set to be longer than the period T₂, the accumulative amount of the plasma generated in the vicinity of the first route L₁ may become larger than the accumulative amount of the plasma generated in the vicinity of the second route L₂, and as a result, the amount of the plasma generated just above the wafer W may become larger than the amount of the plasma generated just above the focus ring 13. Meanwhile, for example, when the period T₂ is set to be longer than the period T₁, the accumulative amount of the plasma generated in the vicinity of the second route L₂ may become larger than the accumulative amount of the plasma generated in the vicinity of the first route L₁, and as a result, the amount of the plasma generated just above the focus ring 13 may become larger than the amount of the plasma generated just above the wafer W.

When the first route L₁ and the second route L₂ have, for example, different LC circuits provided therein and thus the reflectivity at the reflection minimum frequency F₁ and the reflectivity at the reflection minimum frequency F₂ become different values, the period T₁ and the period T₂ may be differently set, and the ratio of the period T₁ and the period T₂ may be determined according to, for example, the ratio of the reflectivity R₁ of a high frequency current at the reflection minimum frequency F₁ and the reflectivity R₂ of a high frequency current at the reflection minimum frequency F₂. Specifically, in the case where the reflectivity R₂ is lower than the reflectivity R₁ (see the upper graph in FIG. 5), when the period T₁ is set to be longer than the period T₂ (see, the lower graph in FIG. 5), the accumulative amount of the plasma generated in the vicinity of the first route L₁ may become substantially equal to the accumulative amount of the plasma generated in the vicinity of the second route L₂, and as a result, the amount of the plasma generated just above the wafer W may become equal to the amount of the plasma generated just above the focus ring 13. Meanwhile, when the period T₁ and the period T₂ is set to be the same, the accumulative amount of the plasma generated in the vicinity of the first route L₁ may become smaller than the accumulative amount of the plasma generated in the vicinity of the second route L₂, and as a result, the amount of the plasma generated just above the wafer W may be set to be smaller than the amount of the plasma generated just above the focus ring 13.

Meanwhile, as the frequency of a high frequency current is changed, the amount G₁ of plasma generated in the vicinity of the first route L₁ is gradually changed with the reflection minimum frequency F₁ as an apex and as the frequency of a high frequency current is changed, and the amount G₂ of plasma generated in the vicinity of the second route L₂ is gradually changed with the reflection minimum frequency F₂ as an apex (see the lower graph in FIG. 6). Accordingly, in a predetermined frequency range, the plasma may also be generated in the vicinity of the second route L₂ as well as being generated in the vicinity of the first route L₁.

Accordingly, the frequency of the high frequency current generated from the VF power supply 16 may be set to fall between the reflection minimum frequency F₁ and the reflection minimum frequency F₂. For example, when the frequency of the high frequency current is set as a frequency Fa closer to the reflection minimum frequency F₁ than to the reflection minimum frequency F₂, a large amount of plasma may be generated in the vicinity of the first route L₁ while the generation of the plasma may be maintained to some extent in the vicinity of the second route L₂. When the frequency of the high frequency current is set as a frequency Fb closer to the reflection minimum frequency F₂ than to the reflection minimum frequency F₁, a large amount of plasma may be generated in the vicinity of the second route L₂ while the generation of the plasma may be maintained to some extent in the vicinity of the first route L₁.

In the present exemplary embodiment, as illustrated in the upper graphs in FIGS. 4 to 6, even at the reflection minimum frequency F₁ or the reflection minimum frequency F₂, the reflectivity R₁ and the reflectivity R₂ do not become 0. Thus, it is preferable that the VF power supply 16 is highly reflection-resistant to allow the reflection of the high frequency current to some extent. Also, it is preferable that the VF power supply 16 generates a high frequency current in a larger amount than required in anticipation of the reflection of the high frequency current.

Hereinafter, a plasma processing apparatus according to a second exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the first exemplary embodiment described above in configurations and functional actions, but is different from the first exemplary embodiment described above in that a side wall electrode 20 is disposed on a side wall 11 a of the chamber 11. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 7 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 7, the chamber 11 of a plasma processing apparatus 21 includes a side wall electrode 20 disposed on the side wall 11 a to face plasma P, in which the side wall electrode 20 is connected to the VF power supply 16 via an LC circuit 15 d.

In the plasma processing apparatus 21, when the VF power supply 16 applies a high frequency power to the side wall electrode 20, the plasma P extends to the vicinity of the side wall electrode 20. Thus, a sheath S₃ is interposed between the plasma P and the side wall electrode 20. Here, cations are implanted into the inner surface of the side wall 11 a of the chamber 11 from the plasma P according to the potential of the side wall electrode 20, and the cations remove, for example, deposits deposited on the inner surface by sputtering. That is, the inner surface of the side wall 11 a of the chamber 11 may be cleaned.

In the present exemplary embodiment, the second route L₂ passes through the LC circuit 15 d, the side wall electrode 20, the sheath S₃, the plasma P, the sheath S₂, and the upper electrode 14, starting from the VF power supply 16. Here, for example, a path capacity C_(s3) of the sheath S₃ is present in the second route L₂. Thus, the first route L₁ and the second route L₂ have different specific reflection minimum frequencies F₁ and F₂, respectively.

Accordingly, in the present exemplary embodiment, the amount of the high frequency current flowing through the first route L₁ or the second route L₂ may be adjusted by changing the frequency of the high frequency current generated from the VF power supply 16, so that the performance of generation of the plasma P and the performance of inner surface cleaning (hereinafter, simply referred to as “cleaning”) of the side wall 11 a of the chamber 11 may be switched to each other. For example, when the VF power supply 16 generates a high frequency current having a frequency close to the reflection minimum frequency F₁, the plasma P may be generated in the vicinity of the first route L₁. When the VF power supply 16 generates a high frequency current having a frequency close to the reflection minimum frequency F₂, the cleaning may be performed. That is, the performance of generation of the plasma P and the performance of the cleaning may be switched to each other only by changing the frequency of the high frequency current generated from the VF power supply 16. Thus, the cleaning may be easily performed at a desired point of time.

Hereinafter, a plasma processing apparatus according to a third exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the first exemplary embodiment described above in configurations and functional actions, but is different from the first exemplary embodiment described above in that the present exemplary embodiment includes a switching box 22 disposed between the upper electrode 14 and the ground. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 8 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 8, a plasma processing apparatus 23 includes a switching box 22 disposed between the upper electrode 14 and the ground, outside the chamber 11. The susceptor 12 is made of a dielectric material and a conductive plate 17 is embedded in the susceptor 12 so that the LC circuit 15 is connected to the conductive plate 17.

The switching box 22 is a capacity-variable mechanism in which a plurality of capacitors having different capacities is included, and a capacitor having a desired capacity may be selected by mechanically switching an internal route to change a path capacity C_(v) of the switching box 22.

In the present exemplary embodiment, the first route L₁ passes through the LC circuit 15, the conductive plate 17, the susceptor 12, the wafer W, the sheath S₁, the plasma P, the sheath S₂, the upper electrode 14, and the switching box 22, starting from the VF power supply 16, and the second route L₂ passes through the LC circuit 15, the conductive plate 17, the susceptor 12, the focus ring 13, the sheath S₁, plasma P, the sheath S₂, the upper electrode 14, and the switching box 22, starting from the VF power supply 16.

In the first route L₁, for example, a path capacity C_(m) of the susceptor 12, a path capacity C_(s1) of the sheath S₁, a path capacity C_(p) of the plasma P, a path capacity C_(s2) of the sheath S₂, and a path capacity C_(v) of the switching box 22 exist, and in the second route L₂, for example, a path capacity C_(m) of the susceptor 12, a path capacity C_(f) of the focus ring 13, a path capacity C_(s1) of the sheath S₁, a path capacity C_(p) of the plasma P, a path capacity C_(s2), of the sheath S₂, and a path capacity C_(v) of the switching box 22 exist. Thus, the first route L₁ and the second route L₂ have different specific reflection minimum frequencies F₁ and F₂, respectively.

In the plasma processing apparatus 23, the path capacity C_(p) of the plasma P is largely changed after the plasma P is ignited, and thus the reflection minimum frequency F₁ is also largely changed. Here, in a case where the VF power supply 16 has generated a high frequency current having a reflection minimum frequency F₁ based on a pre-ignition path capacity C of the plasma P before the ignition of the plasma P so as to allow a large amount of high frequency current to flow through the first route L₁, the reflection minimum frequency F₁ is largely changed after the ignition of the plasma P. Thus, it may be difficult to allow the large amount of high frequency current to flow through the first route L₁, and to maintain the ignited state of the plasma P.

Accordingly, in the present exemplary embodiment, the path capacity C_(v) of the switching box 22 is changed according to a change in the path capacity C of the plasma P so that the reflection minimum frequency F₁ is not largely changed after the plasma P is ignited, preferably the reflection minimum frequency F₁ is not changed. Accordingly, even when the VF power supply 16 has generated a high frequency current having the reflection minimum frequency F₁ based on the pre-ignition path capacity C of the plasma P, it is possible to suppress the amount of the high frequency current flowing through the first route L₁ from being abruptly reduced after the plasma P is ignited, and to maintain the ignition state of the plasma P.

In a case where it is impossible to maintain the same reflection minimum frequency F₁ before and after ignition of the plasma P even by changing the path capacity C_(v) of the switching box 22, the frequency of the high frequency current generated from the VF power supply 16 may be set to the reflection minimum frequency F₁ after the ignition of the plasma P or a value close to the reflection minimum frequency F₁.

Hereinafter, a plasma processing apparatus according to a fourth exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the first exemplary embodiment described above in configurations and functional actions, but is different from the above described first exemplary embodiment in that the present exemplary embodiment includes a circulator 24 disposed between the upper electrode 14 and the ground. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 9 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 9, a plasma processing apparatus 25 includes a circulator 24 disposed between the upper electrode 14 and the ground, outside the chamber 11. The susceptor 12 is made of a dielectric material and a conductive plate 17 is embedded in the susceptor 12 so that the LC circuit 15 is connected to the conductive plate 17.

In the present exemplary embodiment, starting from the VF power supply 16, the first route L₁ passes through the LC circuit 15, the conductive plate 17, the susceptor 12, the wafer W, the sheath S₁, the plasma P, the sheath S₂, the upper electrode 14, and the circulator 24. Starting from the VF power supply 16, the second route L₂ passes through an LC circuit 15 e, the circulator 24, the upper electrode 14, the sheath S₂, the plasma P, the sheath S₁, the wafer W, the susceptor 12, the conductive plate 17, and the LC circuit 15.

In the first route L₁, for example, a path capacity of the LC circuit 15, a path capacity C_(m) of the susceptor 12, a path capacity C_(s1) of the sheath S₁, a path capacity C_(p) of the plasma P, and a path capacity C_(s2) of the sheath S₂ exist, and in the second route L₂, for example, a path capacity of the LC circuit 15 e, a path capacity C_(s2) of the sheath S₂, a path capacity C_(p) of the plasma P, a path capacity C_(s1) of the sheath S₁, a path capacity C_(m) of the susceptor 12, and a path capacity of the LC circuit 15 exist. Thus, the first route L₁ and the second route L₂ have different specific reflection minimum frequencies F₁ and F₂, respectively.

However, as described above, since the first route L₁ advances from the susceptor 12 toward the upper electrode 14, the plasma P is generated in a large amount at the susceptor 12 side, for example, in the vicinity of the wafer W when a high frequency current flows through the first route L₁. Since the second route L₂ advances from the upper electrode 14 toward the susceptor 12, the plasma P is generated in a large amount in the vicinity of the upper electrode 14 when a high frequency current flows through the second route L₂.

Therefore, in the present exemplary embodiment, the amount of the high frequency current flowing through the first route L₁ or the second route L₂ may be adjusted by changing the frequency of the high frequency current generated from the VF power supply 16 so as to control the amount of the plasma generated in the vicinity of the wafer W or the upper electrode 14. For example, the VF power supply 16 may generate a high frequency current having a frequency close to the reflection minimum frequency F₁ so as to increase the amount of plasma generated in the vicinity of the wafer W, and may generate a high frequency current having a frequency close to the reflection minimum frequency F₂ so as to increase the amount of plasma generated in the vicinity of the upper electrode 14.

In the present exemplary embodiment, the circulator 24 is used to constitute the second route L₂. Instead of the circulator 24, however, a wall portion of the chamber 11 may be used to constitute the second route L₂. In this case, the second route L₂ passes through the LC circuit 15 e, the upper electrode 14, the sheath S₂, the plasma P, and the wall portion of the chamber 11, starting from the VF power supply 16.

Hereinafter, a plasma processing apparatus according to a fifth exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the first exemplary embodiment described above in configurations and functional actions, but is different from the first exemplary embodiment described above in that the VF power supply 16 is connected to the upper electrode rather than the susceptor 12. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 10 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 10, in a plasma processing apparatus 26, the upper electrode 14 is divided into an inner electrode 27 facing the wafer W, and an outer electrode 28 disposed to face the focus ring 13 and to surround the inner electrode 27. The inner electrode 27 and the outer electrode 28 are insulated from each other. The susceptor 12 is made of a dielectric material, in which the conductive plate 17 is embedded in the susceptor 12. The susceptor 12 is grounded, the VF power supply 16 is connected to the inner electrode 27 via a capacitor 29 and an LC circuit 15 f, and the VF power supply 16 is connected to the outer electrode 28 via the capacitor 29 and an LC circuit 15 g.

In the present exemplary embodiment, the first route L₁ passes through the LC circuit 15 f, the inner electrode 27, the sheath S₂, the plasma P, the sheath S₁, the wafer W, the susceptor 12, and the conductive plate 17 from a junction d at the downstream of the capacitor 29, and the second route L₂ passes through the LC circuit 15 g, the outer electrode 28, the sheath S₂, the plasma P, the sheath S₁, the focus ring 13, the susceptor 12, and the conductive plate 17 from the junction d.

In the first route L₁, for example, a path capacity of the LC circuit 15 f, a path capacity C_(s2) of the sheath S₂, a path capacity C_(p) of the plasma P, a path capacity C_(s1) of the sheath S₁, and a path capacity C_(m) of the susceptor 12 exist, and in the second route L₂, for example, a path capacity of the LC circuit 15 g, a path capacity C_(s2) of the sheath S₂, a path capacity C_(p) of the plasma P, a path capacity C_(s1) of the sheath S₁, a path capacity C_(f) of the focus ring 13, and a path capacity C_(m) of the susceptor 12 exist. Thus, the first route L₁ and the second route L₂ have different specific path capacities, respectively, and have different specific reflection minimum frequencies F₁ and F₂.

Accordingly, in the present exemplary embodiment, the amount of the high frequency current flowing through the first route L₁ or the second route L₂ may be adjusted by changing the frequency of the high frequency current generated from the VF power supply 16 so as to control the amount of the plasma generated in the vicinity of the first route L₁ or the second route L₂, in the same manner as in the first exemplary embodiment. Accordingly, in the plasma processing apparatus 26, the amount of the plasma generated within the chamber 11 may be locally controlled.

In the plasma processing apparatus 26 described above, it is preferable that the reflection minimum frequency F₁ and the reflection minimum frequency F₂ fall in a frequency range of a high frequency current which is changeable by the VF power supply 16. Thus, it may be required to adjust the reflection minimum frequency F₁ or the reflection minimum frequency F₂. In this case, in the same manner as in the first exemplary embodiment, for example, an LC circuit 15 may added to the first route L₁ or the second route L₂ to change a path capacity.

In the plasma processing apparatus 26 described above, in the same manner as in the first exemplary embodiment, the frequency of a high frequency current generated from the VF power supply 16 is alternately repeatedly changed between the reflection minimum frequency F₁ and the reflection minimum frequency F₂ in a pulse manner. In this case, the period T₁ and the period T₂ may be set to be the same or different according to, for example, an object of the plasma processing. Further, the ratio of the period T₁ and the period T₂ may be determined according to the ratio of the reflectivity R₁ of the high frequency current at the reflection minimum frequency F₁ and the reflectivity R₂ of the high frequency current at the reflection minimum frequency F₂. Also, the frequency of the high frequency current generated from the VF power supply 16 may be set to fall between the reflection minimum frequency F₁ and the reflection minimum frequency F₂.

In the above described plasma processing apparatus 26, the capacitor 29 is provided between the VF power supply 16, and the junction d of the first route L₁ and the second route L₂. Accordingly, in the route of the high frequency current from the VF power supply 16 to the ground, relative capacities of the first route L₁ and the second route L₂ may be reduced, and thus a difference between the first route L₁ and the second route L₂ may be reduced. As a result, the reflection minimum frequency F₁ and the reflection minimum frequency F₂ may be set to be close to each other, and the reflection minimum frequency F₁ and the reflection minimum frequency F₂ may securely fall in a frequency range of a high frequency current which is changeable by the VF power supply 16.

Hereinafter, a plasma processing apparatus according to a sixth exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the fifth exemplary embodiment described above in configurations and functional actions, but is different from the fifth exemplary embodiment described above in that supply of a high frequency power to the first route L₁ or the second route L₂ is performed by inductive coupling. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 11 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 11, in a plasma processing apparatus 30, the VF power supply 16 is grounded via a coil 31 and a coil 32, a coil 33 of the LC circuit 15 f of the first route L₁ confronts the coil 31, and a coil 34 of the LC circuit 15 g of the second route L₂ confronts the coil 32.

When a high frequency current having the reflection minimum frequency F₁ is generated from the VF power supply 16, the coil 31 is inductively coupled to the coil 33 in the first route L₁, so that the high frequency current as an induced current flows through the first route L₁. When a high frequency current having a reflection minimum frequency F₂ is generated from the VF power supply 16, the coil 32 is inductively coupled to the coil 34 in the second route L₂, so that the high frequency current as an induced current flows through the second route L₂.

Accordingly, in the present exemplary embodiment, when the frequency of the high frequency current generated from the VF power supply 16 may be changed and set to the reflection minimum frequency F₁ or the reflection minimum frequency F₂, the amount of plasma generated in the vicinity of the first route L₁ or the amount of plasma generated in the vicinity of the second route L₂ may be controlled by allowing the high frequency current to flow through the first route L₁ or the second route L₂. Accordingly, in the plasma processing apparatus 30, the amount of the plasma generated within the chamber 11 may be locally controlled.

However, in the inductive coupling, an induced current is not generated by a high frequency current having any frequency other than the reflection minimum frequency. Thus, in the present exemplary embodiment, when the frequency of the high frequency current generated from the VF power supply 16 is set to any frequency other than the reflection minimum frequency F₁ or the reflection minimum frequency F₂, plasma is not generated within the chamber 11. When the frequency of the high frequency current generated from the VF power supply 16 is set to the reflection minimum frequency F₁ or the reflection minimum frequency F₂, plasma is generated only in the vicinity of the first route L₁ or the second route L₂.

In the plasma processing apparatus 30 described above, wiring from the VF power supply 16 is not directly connected to the first route L₁ or the second route L₂. Thus, the VF power supply 16 is not subjected to reflection of the high frequency current from the first route L₁ or the second route L₂ so that the reliability of the VF power supply 16 may be improved.

In the plasma processing apparatus 30 described above, in order to adjust the reflection minimum frequency F₁ or the reflection minimum frequency F₂, for example, an LC circuit 15 may added to the first route L₁ or the second route L₂ to change a path capacity in the same manner as in the fifth exemplary embodiment. Also, in the plasma processing apparatus 30 described above, the frequency of a high frequency current generated from the VF power supply 16 is alternately repeatedly changed between the reflection minimum frequency F₁ and the reflection minimum frequency F₂ in a pulse manner. In this case, the period T₁ and the period T₂ may be set to be the same or different.

In the fifth or sixth exemplary embodiment described above, the upper electrode 14 is divided into the inner electrode 27 and the outer electrode 28, but the division form of the upper electrode 14 is not limited thereto. For example, as illustrated in FIG. 12A, the upper electrode 14 may be concentrically divided into three electrodes of an inner electrode 35, an intermediate electrode 36, and an outer electrode 37. Alternatively, as illustrated in FIG. 12B, the upper electrode 14 may be divided into, for example, a plurality of regular hexagonal honeycomb-shaped electrodes 38. In this case, wiring from the VF power supply 16 may be branched toward the respective electrodes, or a coil for inductive coupling may be provided in each electrode. However, in a case where the upper electrode is divided into a plurality of electrodes, wiring may become complicated due to the branch-off. Thus, it is preferable that the coil for inductive coupling is provided in each electrode in view of structure simplification.

Hereinafter, a plasma processing apparatus according to a seventh exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the fifth exemplary embodiment described above in configurations and functional actions, but is different from the fifth exemplary embodiment described above in that a side wall electrode 39 is disposed in a side wall 11 b of the chamber 11. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 13 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 13, the chamber 11 of a plasma processing apparatus 40 includes a side wall electrode 39 disposed on the side wall 11 b to face plasma P, in which the side wall electrode 39 is connected to the VF power supply 16 via an LC circuit 15 g.

In the plasma processing apparatus 40, when the VF power supply 16 applies a high frequency power to the side wall electrode 39, the plasma P extends to the vicinity of the side wall electrode 39 in the same manner as in the second exemplary embodiment. Thus, a sheath S₄ is interposed between the plasma P and the side wall electrode 39. Here, cations are implanted into the inner surface of the side wall 11 b of the chamber 11 from the plasma P according to the potential of the side wall electrode 39, and the cations remove, for example, deposits deposited on the inner surface by sputtering. That is, the inner surface of the side wall 11 b of the chamber 11 may be cleaned.

In the present exemplary embodiment, the second route L₂ passes through the LC circuit 15 g, the side wall electrode 39, the sheath S₄, the plasma P, the sheath S₁, the susceptor 12 and the conductive plate 17, starting from the VF power supply 16. Here, in the second route L₂, for example, a path capacity C_(s4) of the sheath S₄ is present. Thus, the first route L₁ and the second route L₂ have different specific reflection minimum frequencies F₁ and F₂, respectively.

That is, in the present exemplary embodiment, the amount of the high frequency current flowing through the first route L₁ or the second route L₂ may be adjusted only by changing the frequency of the high frequency current generated from the VF power supply 16 in the same manner as in the second exemplary embodiment, so that the performance of generation of the plasma P and the performance of inner surface cleaning of the side wall 11 b of the chamber 11 are switched to each other. Thus, the cleaning may be easily performed at a desired point of time.

Hereinafter, a plasma processing apparatus according to an eighth exemplary embodiment of the present disclosure will be described.

The present exemplary embodiment is basically the same as the fifth exemplary embodiment described above in configurations and functional actions, but is different from the fifth exemplary embodiment described above in that a switching box 22 is provided to be disposed between the susceptor 12 (the conductive plate 17) and the ground. Accordingly, descriptions on the redundant configurations and functional actions will be omitted, and configurations and functional actions specific to the present exemplary embodiment will be described.

FIG. 14 is a cross-sectional view schematically illustrating a configuration of a plasma processing apparatus according to the present exemplary embodiment.

In FIG. 14, a plasma processing apparatus 41 includes a switching box 22 disposed between the susceptor 12 and the ground, outside the chamber 11.

In the present exemplary embodiment, the first route L₁ passes through the LC circuit 15 f, the inner electrode 27, the sheath S₂, the plasma P, the sheath S₁, the wafer W, the susceptor 12, the conductive plate 17, and the switching box 22, and the second route L₂ passes through the LC circuit 15 g, the outer electrode 28, the sheath S₂, the plasma P, the sheath S₁, the focus ring 13, the susceptor 12, the conductive plate 17, and the switching box 22.

In the first route L₁, for example, a path capacity of the LC circuit 15 f, a path capacity C_(s2) of the sheath S₂, a path capacity C_(p) of the plasma P, a path capacity C_(s1) of the sheath S₁, a path capacity C_(m) of the susceptor 12, and a path capacity C₁, C₂, C₃ . . . C_(n) of the switching box 22 exist, and in the second route L₂, for example, a path capacity of the LC circuit 15 g, a path capacity C_(s2) of the sheath S₂, a path capacity C_(p) of the plasma P, a path capacity C_(s1) of the sheath S₁, a path capacity C_(f) of the focus ring 13, and a path capacity C_(m) of the susceptor 12 exist. Thus, the first route L₁ and the second route L₂ have specific path capacities, respectively, and different specific reflection minimum frequencies F₁ and F₂, respectively.

In the plasma processing apparatus 41, in the same manner as in the plasma processing apparatus 23, the path capacity C_(p) of the plasma P is largely changed after the plasma P is ignited, and thus the reflection minimum frequency F₁ is also largely changed.

Accordingly, in the present exemplary embodiment, in the same manner as in the third exemplary embodiment, the path capacity C_(n) of the switching box 22 is changed according to a change in the path capacity C of the plasma P so that the reflection minimum frequency F₁ is not largely changed after the plasma P is ignited, preferably so that the reflection minimum frequency F₁ is not changed. Accordingly, even when the VF power supply 16 has generated a high frequency current having the reflection minimum frequency F₁ based on a pre-ignition path capacity C of the plasma P, the ignition state of the plasma P may be maintained.

In the foregoing, the present disclosure has been described using respective exemplary embodiments, but is not limited thereto.

For example, in the respective exemplary embodiments as described above, only two routes (the first route L₁ and the second route L₂) of a high frequency current are present. However, even when other routes having different capacities exist between the VF power supply 16 and the ground, these may become routes for the high frequency current. Thus, the number of routes of a high frequency current is not limited to two in a plasma processing apparatus. Here, the VF power supply 16 may generate a high frequency current having a reflection minimum frequency for each route, thereby more locally controlling the generated amount of plasma.

The object of the present disclosure may be achieved when a storage medium storing program codes of software is provided to, for example, a computer (not illustrated), and a CPU of the computer reads out and executes the program codes stored in the storage medium. The software is designed to execute the functions of the respective exemplary embodiments described above.

In this case, the program codes themselves, read out from the storage medium, may execute the functions of the respective exemplary embodiments as described above, and the program codes and the storage medium storing the program codes constitute the present disclosure.

The storage medium for providing the program codes may be anything as long as it can store the program codes, and examples thereof may include, an RAM, an NV-RAM, a floppy disk (registered mark), a hard disk, a magneto-optical disk, an optical disk such as, for example, a CD-ROM, a CD-R, a CD-RW, or a DVD (DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), a magnetic tape, a volatile memory card, and other ROMs. Alternatively, the program codes may be provided to the computer by being downloaded from, for example, another computer or database (not illustrated) connected to, for example, internet, a commercial network, or a local area network.

As described above, the functions of the exemplary embodiments may be achieved by executing the program codes read out by the computer. Further, based on the instruction of the program codes, for example, an operating system (OS) driven in the CPU may perform some or all of actual processings, and then the above described functions of the exemplary embodiments may be achieved by the processings.

The program codes read out from the storage medium may be stored in a memory provided in a function expansion board inserted in the computer or a function expansion unit connected to the computer, and based on the instruction of the program codes, for example, a CPU provided in the function expansion board or the function expansion unit may perform some or all of actual processings. Then, the above described functions of the exemplary embodiments may be achieved by the processings.

The program codes may be constituted by object codes, program codes executable by an interpreter, or script data to be supplied to an OS.

From the foregoing, it will be appreciated that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the following claims. 

What is claimed is:
 1. A plasma processing apparatus comprising: a processing chamber configured to accommodate a substrate therein to perform a processing on the substrate using plasma; a lower electrode configured to generate the plasma within the processing chamber and an upper electrode that faces the lower electrode, the upper electrode being a counter electrode; a high frequency power supply connected to the lower electrode and configured to supply a high frequency power to the lower electrode; a mounting stage including the lower electrode and configured to mount the substrate within the processing chamber; a focus ring disposed to surround the substrate mounted on the mounting stage; and a controller configured to execute a plasma processing, the controller including a processor, wherein the controller controls the plasma processing such that the lower electrode generates the plasma within the processing chamber and a plurality of routes of a high frequency current is formed while the plasma exists starting from the high frequency power supply to reach the upper electrode while passing through the plasma, and the plurality of routes of the high frequency current includes at least a first route and a second route, the controller configured to adjust a frequency of the high frequency current generated from the high frequency power supply so as to control an amount of the plasma generated in a vicinity of the first route or the second route, the upper electrode includes an inner electrode which faces the substrate, and an outer electrode surrounding the inner electrode and disposed to face the focus ring, the first route passes through the lower electrode, the mounted substrate, the plasma, and the inner electrode of the upper electrode, the second route passes through the lower electrode, the focus ring, the plasma, and the outer electrode of the upper electrode, the inner electrode is grounded via a first impedance adjusting circuit, and the outer electrode is grounded via a second impedance adjusting circuit, the first impedance circuit is configured to have an impedance different from an impedance of the second impedance adjusting circuit, and wherein the controller is configured to adjust the frequency of the high frequency current generated from the high frequency power supply and thereby vary an amount of current passing through the first route and the first impedance adjusting circuit and the second route and the second impedance adjusting circuit.
 2. The plasma processing apparatus of claim 1, further comprising a capacitance-variable switching box disposed outside the processing chamber and configured to change a capacitance, wherein the first route passes through the mounting stage, the mounted substrate, the plasma and the capacity-variable switching box, and the capacitance of the capacitance-variable switching box is changed according to a change of a capacitance of the plasma after the plasma is ignited.
 3. The plasma processing apparatus of claim 1, further comprising a circulator disposed between the counter electrode and a ground, wherein the first route passes through the mounting stage, the mounted substrate and the plasma, and the second route passes through the circulator, the counter electrode and the plasma.
 4. The plasma processing apparatus of claim 1, wherein the plasma processing apparatus is a parallel-plate capacitively-coupled plasma processing apparatus.
 5. The plasma processing apparatus of claim 1, wherein the high frequency power for generating plasma is supplied from the high frequency power supply.
 6. The plasma processing apparatus of claim 1, wherein the first impedance adjusting circuit and the second impedance adjusting circuit includes a variable capacitor.
 7. The plasma processing apparatus of claim 1, wherein the inner electrode and the outer electrode are insulated from each other. 